Advanced Materials

All-Organic Photopatterned One Diode-One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications

Authors

  • Tae-Wook Kim,

    1. Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA
    2. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeollabuk-do, 565-902, Korea, E-mail: twkim@kist.re.kr
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  • David F. Zeigler,

    1. Department of Chemistry, University of Washington, Box 351700, Seattle, WA 98195, USA
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  • Orb Acton,

    1. Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA
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  • Hin-Lap Yip,

    1. Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA
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  • Hong Ma,

    1. Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA
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  • Alex K.-Y. Jen

    Corresponding author
    1. Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA
    2. Department of Chemistry, University of Washington, Box 351700, Seattle, WA 98195, USA
    • Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195, USA.
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Abstract

An all organic, photopatterned 4 × 4 one diode-one resistor (1D–1R) cell array consisting of a photopatterned organic schottky diode and organic memory were fabricated and tested. Our results show that the all-organic type photopatterned 4 × 4 1D–1R cell array architecture not only improves reading accessibility, but also prevents cross-talk with neighboring cells. Each 1D–1R cell in the array architecture showed excellent switching performance, which suggests that such memory devices can be used for future advanced nonvolatile memory applications.

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