Communication

Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template

  1. Zhiyuan Zeng1,
  2. Xiao Huang1,
  3. Zongyou Yin1,
  4. Hong Li2,
  5. Yang Chen1,
  6. Hai Li1,
  7. Qing Zhang2,
  8. Jan Ma1,
  9. Freddy Boey1,
  10. Hua Zhang1,*

Article first published online: 21 MAR 2012

DOI: 10.1002/adma.201104281

Issue

Advanced Materials

Advanced Materials

Special Issue: Materials Research at Nanyang Technological University, Singapore

Volume 24, Issue 30, pages 4138–4142, August 8, 2012

Additional Information

How to Cite

Zeng, Z., Huang, X., Yin, Z., Li, H., Chen, Y., Li, H., Zhang, Q., Ma, J., Boey, F. and Zhang, H. (2012), Fabrication of Graphene Nanomesh by Using an Anodic Aluminum Oxide Membrane as a Template. Adv. Mater., 24: 4138–4142. doi: 10.1002/adma.201104281

Author Information

  1. 1

    School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

  2. 2

    Microelecronics Center, School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

*School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

Publication History

  1. Issue published online: 2 AUG 2012
  2. Article first published online: 21 MAR 2012
  3. Manuscript Revised: 23 DEC 2011
  4. Manuscript Received: 8 NOV 2011

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Keywords:

  • graphene;
  • nanomesh;
  • nanofabrication;
  • anodic aluminum oxide (AAO);
  • field-effect transistors
Thumbnail image of graphical abstract

Large-area graphene nanomesh (GNM) is prepared using a new and effective method, in which the O2 plasma treatment is used with an anodic aluminum oxide (AAO) membrane as an etch mask. By varying the pore size and cell wall thickness of the AAO membrane, GNM with tunable pore size and neck width can be prepared. As proof of concept, a field-effect transistor with 15 nm neck width GNM as the conductive channel is fabricated, which exhibits p-type semiconducting behavior.

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