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Advanced Materials

Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions

Authors

  • Massimiliano Cavallini,

    Corresponding author
    1. Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, Bologna, I-40129, Italy
    • Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, Bologna, I-40129, Italy.
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  • Zahra Hemmatian,

    1. Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, Bologna, I-40129, Italy
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  • Alberto Riminucci,

    1. Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, Bologna, I-40129, Italy
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  • Mirko Prezioso,

    1. Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, Bologna, I-40129, Italy
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  • Vittorio Morandi,

    1. Consiglio Nazionale delle Ricerche- Istituto, per la Microelettronica e i Microsistemi, (CNR-IMM), Via P. Gobetti 101, I-40129 Bologna, Italy
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  • Mauro Murgia

    1. Consiglio Nazionale delle Ricerche-Istituto per lo Studio dei Materiali, Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, Bologna, I-40129, Italy
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Abstract

A nanomemristor based on SiO2 is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.

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