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Single Polymer-Based Ternary Electronic Memory Material and Device

Authors

  • Shu-Juan Liu,

    1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
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  • Peng Wang,

    1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
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  • Qiang Zhao,

    Corresponding author
    1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
    • Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
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  • Hui-Ying Yang,

    1. Pillar of Engineering Product Development, Singapore University of Technology and Design, 287 Ghim Moh Road, 279623, Singapore
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  • Jenlt Wong,

    1. Pillar of Engineering Product Development, Singapore University of Technology and Design, 287 Ghim Moh Road, 279623, Singapore
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  • Hui-Bin Sun,

    1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
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  • Xiao-Chen Dong,

    Corresponding author
    1. Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
    • Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China.
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  • Wen-Peng Lin,

    1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
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  • Wei Huang

    Corresponding author
    1. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
    • Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210046, PR China
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Abstract

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A ternary polymer memory device based on a single polymer with on-chain Ir(III) complexes is fabricated by combining multiple memory mechanisms into one system. Excellent ternary memory performances—low reading, writing, and erasing voltages and good stability for all three states—are achieved.

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