Communication

Enhancement of Ferroelectric Polarization Stability by Interface Engineering

  1. H. Lu1,
  2. X. Liu1,
  3. J. D. Burton1,
  4. C.-W. Bark2,
  5. Y. Wang1,
  6. Y. Zhang3,
  7. D. J. Kim1,
  8. A. Stamm1,
  9. P. Lukashev1,
  10. D. A. Felker4,
  11. C. M. Folkman2,
  12. P. Gao3,
  13. M. S. Rzchowski4,
  14. X. Q. Pan3,
  15. C.-B. Eom4,
  16. E. Y. Tsymbal1,
  17. A. Gruverman1,*

Article first published online: 26 JAN 2012

DOI: 10.1002/adma.201104398

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 9, pages 1209–1216, March 2, 2012

Additional Information

How to Cite

Lu, H., Liu, X., Burton, J. D., Bark, C.-W., Wang, Y., Zhang, Y., Kim, D. J., Stamm, A., Lukashev, P., Felker, D. A., Folkman, C. M., Gao, P., Rzchowski, M. S., Pan, X. Q., Eom, C.-B., Tsymbal, E. Y. and Gruverman, A. (2012), Enhancement of Ferroelectric Polarization Stability by Interface Engineering. Adv. Mater., 24: 1209–1216. doi: 10.1002/adma.201104398

Author Information

  1. 1

    Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA

  2. 2

    Department of Materials Science and Engineering, University of Wisconsin-Madison, WI 53706, USA

  3. 3

    Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA

  4. 4

    Department of Physics, University of Wisconsin-Madison, WI 53706, USA

*Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA.

Publication History

  1. Issue published online: 24 FEB 2012
  2. Article first published online: 26 JAN 2012
  3. Manuscript Revised: 23 DEC 2011
  4. Manuscript Received: 11 NOV 2011

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Keywords:

  • Polarization;
  • ferroelectrics;
  • interface engineering;
  • heterostructures;
  • thin films
Thumbnail image of graphical abstract

By using theoretical predictions based on first-principle calculations, we explore an interface engineering approach to stabilize polarization states in ferroelectric heterostructures with a thickness of just several nanometers.

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