Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers

Authors

  • Damar Yoga Kusuma,

    1. School of Material Science and Engineering, Nanyang technological University, Block N4.1, Nanyang Avenue, 639798, Singapore
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  • Pooi See Lee

    Corresponding author
    1. School of Material Science and Engineering, Nanyang technological University, Block N4.1, Nanyang Avenue, 639798, Singapore
    • School of Material Science and Engineering, Nanyang technological University, Block N4.1, Nanyang Avenue, 639798, Singapore.
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Abstract

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Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.

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