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Keywords:

  • VDF oligomer;
  • organic ferroelectric;
  • monolayer film;
  • resistive switching;
  • memory device
Thumbnail image of graphical abstract

Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.