Communication

Graphene/Metal Contacts: Bistable States and Novel Memory Devices

  1. Xiaomu Wang1,
  2. Weiguang Xie1,3,
  3. Jun Du1,
  4. Chengliang Wang1,
  5. Ni Zhao1,
  6. Jian-Bin Xu1,2,*

Article first published online: 10 APR 2012

DOI: 10.1002/adma.201104574

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 19, pages 2614–2619, May 15, 2012

Additional Information

How to Cite

Wang, X., Xie, W., Du, J., Wang, C., Zhao, N. and Xu, J.-B. (2012), Graphene/Metal Contacts: Bistable States and Novel Memory Devices. Adv. Mater., 24: 2614–2619. doi: 10.1002/adma.201104574

Author Information

  1. 1

    Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China

  2. 2

    also Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, China

  3. 3

    also Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China

*Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.

Publication History

  1. Issue published online: 9 MAY 2012
  2. Article first published online: 10 APR 2012
  3. Manuscript Revised: 15 FEB 2012
  4. Manuscript Received: 30 NOV 2011

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

View Full Article with Supporting Information (HTML) Get PDF (846K)

Keywords:

  • graphene;
  • memory device;
  • contact
Thumbnail image of graphical abstract

Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between “ohmic” and “space-charge region limited” states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.

View Full Article with Supporting Information (HTML) Get PDF (846K)