Get access
Advanced Materials

Graphene/Metal Contacts: Bistable States and Novel Memory Devices

Authors

  • Xiaomu Wang,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
    Search for more papers by this author
  • Weiguang Xie,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
    2. also Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
    Search for more papers by this author
  • Jun Du,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
    Search for more papers by this author
  • Chengliang Wang,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
    Search for more papers by this author
  • Ni Zhao,

    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
    Search for more papers by this author
  • Jian-Bin Xu

    Corresponding author
    1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
    2. also Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, China
    • Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
    Search for more papers by this author

Abstract

Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between “ohmic” and “space-charge region limited” states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.

original image
Get access to the full text of this article

Ancillary