Communication

Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics

  1. Peter Cuony1,
  2. Duncan T. L. Alexander2,*,
  3. Ivan Perez-Wurfl3,
  4. Matthieu Despeisse1,
  5. Gregory Bugnon1,
  6. Mathieu Boccard1,
  7. Thomas Söderström1,3,
  8. Aïcha Hessler-Wyser2,
  9. Cécile Hébert2,
  10. Christophe Ballif1

Article first published online: 30 JAN 2012

DOI: 10.1002/adma.201104578

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 9, pages 1182–1186, March 2, 2012

Additional Information

How to Cite

Cuony, P., Alexander, D. T. L., Perez-Wurfl, I., Despeisse, M., Bugnon, G., Boccard, M., Söderström, T., Hessler-Wyser, A., Hébert, C. and Ballif, C. (2012), Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics. Adv. Mater., 24: 1182–1186. doi: 10.1002/adma.201104578

Author Information

  1. 1

    Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering, École Polytechnique Fédérale de Lausanne, 2000 Neuchâtel, Switzerland

  2. 2

    Interdisciplinary Centre for Electron Microscopy, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

  3. 3

    School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia

*Interdisciplinary Centre for Electron Microscopy, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.

Publication History

  1. Issue published online: 24 FEB 2012
  2. Article first published online: 30 JAN 2012
  3. Manuscript Revised: 20 DEC 2011
  4. Manuscript Received: 30 NOV 2011

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Keywords:

  • photovoltaic devices;
  • thin films;
  • silicon oxide;
  • mixed phase;
  • silicon filaments;
  • photoluminescence
Thumbnail image of graphical abstract

Nanometer wide silicon filaments embedded in an amorphous silicon oxide matrix are grown at low temperatures over a large area. The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics.

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