Piezo-Semiconductive Quasi-1D Nanodevices with or without Anti-Symmetry

Authors

  • Rodolfo Araneo,

    1. DIAEE–Electrical Engineering Division, “Sapienza” University of Rome, Via Eudossiana 18, 00184, Rome, Italy
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  • Giampiero Lovat,

    1. DIAEE–Electrical Engineering Division, “Sapienza” University of Rome, Via Eudossiana 18, 00184, Rome, Italy
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  • Paolo Burghignoli,

    1. Department of Information Engineering, Electronics and Telecommunications, “Sapienza” University of Rome, Via Eudossiana 18, 00184, Rome, Italy
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  • Christian Falconi

    Corresponding author
    1. Department of Electronic Engineering, University of Tor Vergata, Via del Politecnico 1, 00133, Rome, Italy
    2. CNR IDASC, Via Fosso del Cavaliere, 100, 00133 Rome, Italy
    • Department of Electronic Engineering, University of Tor Vergata, Via del Politecnico 1, 00133, Rome, Italy.
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Abstract

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The piezopotential in floating, homogeneous, quasi-1D piezo-semiconductive nanostructures under axial stress is an anti-symmetric (i.e., odd) function of force. Here, after introducing piezo-nano-devices with floating electrodes for maximum piezo-potential, we show that breaking the anti-symmetric nature of the piezopotential-force relation, for instance by using conical nanowires, can lead to better nanogenerators, piezotronic and piezophototronic devices.

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