Communication

Guiding Crystallization around Bends and Sharp Corners

  1. Stephanie S. Lee1,
  2. Samuel B. Tang1,
  3. Detlef-M. Smilgies2,
  4. Arthur R. Woll2,
  5. Marsha A. Loth3,
  6. Jeffrey M. Mativetsky1,
  7. John E. Anthony3,
  8. Yueh-Lin Loo1,*

Article first published online: 17 APR 2012

DOI: 10.1002/adma.201104619

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 20, pages 2692–2698, May 22, 2012

Additional Information

How to Cite

Lee, S. S., Tang, S. B., Smilgies, D.-M., Woll, A. R., Loth, M. A., Mativetsky, J. M., Anthony, J. E. and Loo, Y.-L. (2012), Guiding Crystallization around Bends and Sharp Corners. Adv. Mater., 24: 2692–2698. doi: 10.1002/adma.201104619

Author Information

  1. 1

    Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544, USA

  2. 2

    Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14853, USA

  3. 3

    Department of Chemistry, University of Kentucky, Lexington, KY 40506, USA

*Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544, USA.

Publication History

  1. Issue published online: 15 MAY 2012
  2. Article first published online: 17 APR 2012
  3. Manuscript Revised: 27 JAN 2012
  4. Manuscript Received: 2 DEC 2011

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Keywords:

  • directed crystallization;
  • spherulite;
  • solvent-vapor annealing;
  • organic thin films
Thumbnail image of graphical abstract

Control over the molecular orientation in organic thin films is demonstrated with precise in-plane spatial resolution over large areas. By exploiting the differential crystallization rates on substrates with different surface energies, the radial symmetry of spherulitic growth can be disrupted by preferentially selecting the molecular orientations that promote growth along the paths of the underlying patterns.

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