Advanced Materials

Design Rule of Nanostructures in Light-Emitting Diodes for Complete Elimination of Total Internal Reflection

Authors

  • Jun Ho Son,

    1. Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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  • Jong Uk Kim,

    1. Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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  • Yang Hee Song,

    1. Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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  • Buem Joon Kim,

    1. Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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  • Chul Jong Ryu,

    1. Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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  • Jong-Lam Lee

    Corresponding author
    1. Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
    • Department of Materials Science and Engineering, Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
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Abstract

Cone-shaped nanostructures with controllable side-wall angle are success- fully fabricated with a SiO2 nanosphere lithography (NSL) etching mask. Vertical LEDs with cone-shaped nanostructures with a 24.1° side-wall angle provide 6% more light output power compared to those using hexagonal pyramids formed by photochemical etching. This achievement is attributed to effective elimination of total internal reflection by angle-controlled nanostructures.

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