Epitaxial Ferroelectric Heterostructures Fabricated by Selective Area Epitaxy of SrRuO3 Using an MgO Mask

Authors

  • J. Karthik,

    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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  • Anoop R. Damodaran,

    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
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  • Lane W. Martin

    Corresponding author
    1. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA
    • Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.
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Abstract

original image

Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.

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