A Graphite-Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å

Authors

  • Moni Baskey,

    1. Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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  • Shyamal K Saha

    Corresponding author
    1. Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
    • Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
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  • This work is dedicated to my dearest teacher Prof. Dipankar Chakravorty in his 75th Birth Anniversary

Abstract

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The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.

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