This work is dedicated to my dearest teacher Prof. Dipankar Chakravorty in his 75th Birth Anniversary
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Communication
A Graphite-Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 ņ
Article first published online: 23 FEB 2012
DOI: 10.1002/adma.201104717
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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How to Cite
Baskey, M. and Saha, S. K. (2012), A Graphite-Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å. Adv. Mater., 24: 1589–1593. doi: 10.1002/adma.201104717
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Publication History
- Issue published online: 15 MAR 2012
- Article first published online: 23 FEB 2012
- Manuscript Received: 10 DEC 2011
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Keywords:
- graphene;
- zero gap;
- semiconductors;
- re-stacking;
- multilayered structure
The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.