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Keywords:

  • graphene;
  • zero gap;
  • semiconductors;
  • re-stacking;
  • multilayered structure
Thumbnail image of graphical abstract

The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.