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Solution Processed MoO3 Interfacial Layer for Organic Photovoltaics Prepared by a Facile Synthesis Method

Authors

  • Seiichiro Murase,

    1. Department of Material Science and Engineering, University of California, Los Angeles, CA 90025, USA
    2. Electronic and Imaging Materials Laboratories, Toray Industries Inc., Otsu, Shiga, 520-0842 Japan
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  • Yang Yang

    Corresponding author
    1. Department of Material Science and Engineering, University of California, Los Angeles, CA 90025, USA
    • Department of Material Science and Engineering, University of California, Los Angeles, CA 90025, USA.
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Abstract

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An MoO3 film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO3 anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.

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