Communication
Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
Article first published online: 30 MAR 2012
DOI: 10.1002/adma.201104798
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Lee, Y.-H., Zhang, X.-Q., Zhang, W., Chang, M.-T., Lin, C.-T., Chang, K.-D., Yu, Y.-C., Wang, J. T.-W., Chang, C.-S., Li, L.-J. and Lin, T.-W. (2012), Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition. Adv. Mater., 24: 2320–2325. doi: 10.1002/adma.201104798
Publication History
- Issue published online: 23 APR 2012
- Article first published online: 30 MAR 2012
- Manuscript Revised: 30 JAN 2012
- Manuscript Received: 15 DEC 2011
Keywords:
- molybdenum disulfide;
- layered materials;
- field-effect transistors;
- chemical vapor deposition
Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 monolayer. The TEM images verify that the synthesized MoS2 sheets are highly crystalline.

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