Advanced Materials

Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition

Authors

  • Yi-Hsien Lee,

    1. Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Fax:(+886) 223620200
    Current affiliation:
    1. These authors contributed equally.
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  • Xin-Quan Zhang,

    1. Department of Chemistry, Tunghai University, No. 181, Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan, Fax: (+886) 423596233
    Current affiliation:
    1. These authors contributed equally.
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  • Wenjing Zhang,

    1. Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Fax:(+886) 223620200
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  • Mu-Tung Chang,

    1. Institute of Physics, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
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  • Cheng-Te Lin,

    1. Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Fax:(+886) 223620200
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  • Kai-Di Chang,

    1. Department of Chemistry, Tunghai University, No. 181, Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan, Fax: (+886) 423596233
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  • Ya-Chu Yu,

    1. Department of Chemistry, Tunghai University, No. 181, Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan, Fax: (+886) 423596233
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  • Jacob Tse-Wei Wang,

    1. Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Fax:(+886) 223620200
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  • Chia-Seng Chang,

    1. Institute of Physics, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
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  • Lain-Jong Li,

    Corresponding author
    1. Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Fax:(+886) 223620200
    • Institute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Fax:(+886) 223620200
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  • Tsung-Wu Lin

    Corresponding author
    1. Department of Chemistry, Tunghai University, No. 181, Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan, Fax: (+886) 423596233
    • Department of Chemistry, Tunghai University, No. 181, Sec. 3, Taichung Port Rd., Taichung City 40704, Taiwan, Fax: (+886) 423596233.
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Abstract

Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 monolayer. The TEM images verify that the synthesized MoS2 sheets are highly crystalline.

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