Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early

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Abstract

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This scanning electron microscopy image (∼2 μm wide) depicts high-aspect-ratio features patterned in silicon using sequential infiltration synthesis (SIS) enhancement of photoresist. SIS penetrates the polymeric resist layer with etch-resistant alumina, thereby transforming it into a hard mask. This conversion enables the use of very thin resist layers, so pattern collapse is virtually eliminated and goals set forth for lithography in 2022 can be achieved today.

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