High Mobility, Air Stable, Organic Single Crystal Transistors of an n-Type Diperylene Bisimide

Authors

  • Aifeng Lv,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    2. Graduate University of Chinese Academy of Sciences, Beijing 100039, P. R. China
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  • Sreenivasa R. Puniredd,

    1. Max Planck Institute for Polymer Research, Ackermannweg 10, 55118 Mainz, Germany
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  • Jiahui Zhang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    2. Graduate University of Chinese Academy of Sciences, Beijing 100039, P. R. China
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  • Zhibo Li,

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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  • Hongfei Zhu,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Wei Jiang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Huanli Dong,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yudong He,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    2. Graduate University of Chinese Academy of Sciences, Beijing 100039, P. R. China
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  • Lang Jiang,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yan Li,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Wojciech Pisula,

    1. Max Planck Institute for Polymer Research, Ackermannweg 10, 55118 Mainz, Germany
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  • Qing Meng,

    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Wenping Hu,

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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  • Zhaohui Wang

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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Abstract

original image

A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named “Au stripe mask” method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm2 V−1 s−1 with the highest mobility of 4.65 cm2 V−1 s−1. Moreover, the devices exhibit excellent air stability.

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