Strain-Balanced Epitaxial Stacks of Quantum Dots and Posts: Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts (Adv. Mater. 44/2011)

Authors

  • Diego Alonso-Álvarez,

    Corresponding author
    1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
    • IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain.
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  • Jose María Ripalda,

    Corresponding author
    1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
    • IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain.
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  • Benito Alén,

    Corresponding author
    1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
    • IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain.
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  • Jose María Llorens,

    1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
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  • Antonio Rivera,

    1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
    Current affiliation:
    1. Instituto de Fusión Nuclear, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid, Spain
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  • Fernando Briones

    1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Spain
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Abstract

original image

It is expected that optoelectronic devices embed-ding quantum nanostructures will more efficiently harvest sunlight and outperform current light-emit-ting devices and amplifiers. The advantages and difficulties of compensating the stress introduced by these nanostructures are only recently becoming clear. On page 5256, Diego Alonso-Álvarez, Jose María Ripalda, Benito Alén, and co-workers present how a proper combination of barrier materials and in situ monitoring allows for the engineering of the strain in quantum dot stacks and quantum posts, which will improve their future performance in different optoelectronic applications.

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