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Engineering the Electronic Structure of Graphene

Authors

  • Da Zhan,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
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  • Jiaxu Yan,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
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  • Linfei Lai,

    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
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  • Zhenhua Ni,

    1. Department of Physics, Southeast University, Nanjing, 211189, PR China
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  • Lei Liu,

    1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences, Changchun, 130033, China
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  • Zexiang Shen

    Corresponding author
    1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
    • Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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Abstract

Graphene exhibits many unique electronic properties owing to its linear dispersive electronic band structure around the Dirac point, making it one of the most studied materials in the last 5-6 years. However, for many applications of graphene, further tuning its electronic band structure is necessary and has been extensively studied ever since graphene was first isolated experimentally. Here we review the major progresses made in electronic structure engineering of graphene, namely by electric and magnetic fields, chemical intercalation and adsorption, stacking geometry, edge-chirality, defects, as well as strain.

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