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Advanced Materials

High-Performance Transistors and Complementary Inverters Based on Solution-Grown Aligned Organic Single-Crystals

Authors

  • Hanying Li,

    1. Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
    2. Present address: Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
    Current affiliation:
    1. H.Y.L. and B.C.K.T. contributed equally to this work.
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  • Benjamin C.-K. Tee,

    1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
    Current affiliation:
    1. H.Y.L. and B.C.K.T. contributed equally to this work.
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  • Gaurav Giri,

    1. Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
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  • Jong Won Chung,

    1. Display Device Laboratory, Materials and Device Institute, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Youngin 446-712, Korea
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  • Sang Yoon Lee,

    1. Display Device Laboratory, Materials and Device Institute, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Youngin 446-712, Korea
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  • Zhenan Bao

    Corresponding author
    1. Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
    • Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
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Abstract

Well-aligned C60 and TIPS-pentacene single-crystals grow on a common substrate by a droplet-pinned crystallization method. Complementary inverters based on the two aligned crystals show gain values as high as 155. This work demonstrates a simple solution-processing approach to investigate high-performance complementary circuits based on organic single-crystals.

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