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Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

Authors

  • D. O. Scanlon,

    Corresponding author
    1. University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, UK
    • D. O. Scanlon, University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, UK===

      P. D. C. King, SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK.===

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  • P. D. C. King,

    Corresponding author
    1. SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK
    • D. O. Scanlon, University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, UK===

      P. D. C. King, SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK.===

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  • R. P. Singh,

    1. Department of Physics, University of Warwick, Coventry CV4 7AL, UK
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  • A. de la Torre,

    1. SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK
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  • S. McKeown Walker,

    1. SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK
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  • G. Balakrishnan,

    1. Department of Physics, University of Warwick, Coventry CV4 7AL, UK
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  • F. Baumberger,

    1. SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS, UK
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  • C. R. A. Catlow

    1. University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, UK
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Abstract

Intrinsic topological insulators are realized by alloying Bi2Te3 with Bi2Se3. Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.

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