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Keywords:

  • memory devices;
  • resistive switching;
  • light sensing;
  • oxide thin films
Thumbnail image of graphical abstract

Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al2O3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al2O3 layer when a suitable voltage pulse is applied. The resistance of the Al2O3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.