A Light-Controlled Resistive Switching Memory

Authors

  • Mariana Ungureanu,

    Corresponding author
    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
    • CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain.
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  • Raul Zazpe,

    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
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  • Federico Golmar,

    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
    2. I. N. T. I. -CONICET, Av. Gral. Paz 5445, Ed. 42, B1650JKA, San Martín, Bs As, Argentina
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  • Pablo Stoliar,

    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
    2. GIA, CAC - CNEA, Av. Gral. Paz 1499, B1650JKA, San Martín, Bs As, Argentina, and ECyT, UNSAM, Martín de Irigoyen 3100, B1650JKA, San Martín, Bs As, Argentina
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  • Roger Llopis,

    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
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  • Felix Casanova,

    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
    2. IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain
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  • Luis E. Hueso

    Corresponding author
    1. CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain
    2. IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain
    • CIC nanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia - San Sebastian, Spain.
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Abstract

original image

Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al2O3 uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al2O3 layer when a suitable voltage pulse is applied. The resistance of the Al2O3 can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.

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