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Keywords:

  • Ag2Se nanoparticles;
  • solution process;
  • flexible electronics;
  • resistance switching;
  • non-volatile memory
Thumbnail image of graphical abstract

Solution-processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag2Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 105 s, and no degradation in endurance after 104 switching cycles, with stable operation even under a mechanical strain of 0.38%.