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Advanced Materials

Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

Authors

  • Jaewon Jang,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
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  • Feng Pan,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
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  • Kyle Braam,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
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  • Vivek Subramanian

    Corresponding author
    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
    2. World Class University Program, Sunchon National University, 413 Jungangro (315 Maegok), Suncheon, Jeonnam, 540-742, South Korea
    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA.
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Abstract

Solution-processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag2Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 105 s, and no degradation in endurance after 104 switching cycles, with stable operation even under a mechanical strain of 0.38%.

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