Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications
Version of Record online: 12 JUN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 26, pages 3573–3576, July 10, 2012
How to Cite
Jang, J., Pan, F., Braam, K. and Subramanian, V. (2012), Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications. Adv. Mater., 24: 3573–3576. doi: 10.1002/adma.201200671
- Issue online: 3 JUL 2012
- Version of Record online: 12 JUN 2012
- Manuscript Revised: 12 MAR 2012
- Manuscript Received: 16 FEB 2012
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