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Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

Authors

  • Hsiao-Wen Zan,

    Corresponding author
    1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan
    • Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan.
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  • Chun-Cheng Yeh,

    1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan
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  • Hsin-Fei Meng,

    1. Institute of Physics, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan
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  • Chuang-Chuang Tsai,

    1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan
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  • Liang-Hao Chen

    1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Rd, HsinChu, 300, Taiwan
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Abstract

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An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm2 V−1 s−1 to 160 cm2 V−1 s−1. This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

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