Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer
Version of Record online: 8 JUN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 26, pages 3509–3514, July 10, 2012
How to Cite
Zan, H.-W., Yeh, C.-C., Meng, H.-F., Tsai, C.-C. and Chen, L.-H. (2012), Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer. Adv. Mater., 24: 3509–3514. doi: 10.1002/adma.201200683
- Issue online: 3 JUL 2012
- Version of Record online: 8 JUN 2012
- Manuscript Revised: 3 APR 2012
- Manuscript Received: 16 FEB 2012
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