Transparent Nanoscale Floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in Bi2Mg2/3Nb4/3O7 (BMN) Pyrochlore Thin Films Grown at Room Temperature

Authors

  • Hyun-June Jung,

    1. Department of Materials and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea
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  • Soon-Gil Yoon,

    Corresponding author
    1. Department of Materials and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea
    • Department of Materials and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea.
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  • Soon-Ku Hong,

    1. Department of Materials and Engineering, Chungnam National University, Daeduk Science Town, 305-764, Daejeon, Korea
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  • Jeong-Yong Lee

    1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Abstract

original image

Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi2Mg2/3Nb4/3O7 (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the “real” structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al2O3 and HfO2 layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface.

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