High-Performance Printed Transistors Realized Using Femtoliter Gravure-Printed Sub-10 μm Metallic Nanoparticle Patterns and Highly Uniform Polymer Dielectric and Semiconductor Layers

Authors

  • Hongki Kang,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
    Search for more papers by this author
  • Rungrot Kitsomboonloha,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
    Search for more papers by this author
  • Jaewon Jang,

    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
    Search for more papers by this author
  • Vivek Subramanian

    Corresponding author
    1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA
    2. World Class University Program, Sunchon National University, 413 Jungangro (315 Maegok), Suncheon, Jeonnam, 540-742, South Korea
    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA.
    Search for more papers by this author

Abstract

original image

Using a novel high-speed, femtoliter-scale, micro-gravure printing with unprecedented scaling to the sub-10 μm regime and appropriately formulated, characterized, and optimized nanoparticle and polymer ink materials, highly scaled organic thin-film-transistors (OTFTs) are realized. They have excellent DC and AC characteristics and achieve record transition frequencies of 300 kHz, which opens up new classes of applications.

Ancillary