Design of a Voltage-Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

Authors

  • Jia-Mian Hu,

    1. State Key Laboratory of New Ceramics and Fine Processing and Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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  • Zheng Li,

    1. State Key Laboratory of New Ceramics and Fine Processing and Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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  • Long-Qing Chen,

    1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
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  • Ce-Wen Nan

    Corresponding author
    1. State Key Laboratory of New Ceramics and Fine Processing and Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
    • State Key Laboratory of New Ceramics and Fine Processing and Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
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Abstract

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A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.

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