Design of a Voltage-Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer
Version of Record online: 30 APR 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 21, pages 2869–2873, June 5, 2012
How to Cite
Hu, J.-M., Li, Z., Chen, L.-Q. and Nan, C.-W. (2012), Design of a Voltage-Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer. Adv. Mater., 24: 2869–2873. doi: 10.1002/adma.201201004
- Issue online: 30 MAY 2012
- Version of Record online: 30 APR 2012
- Manuscript Revised: 4 APR 2012
- Manuscript Received: 9 MAR 2012
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