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Advanced Materials

Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics

Authors

  • Ruomeng Yu,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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  • Lin Dong,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
    2. School of Materials Science and Enginnering, Zhengzhou University, Zhengzhou, 450001, China
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  • Caofeng Pan,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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  • Simiao Niu,

    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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  • Hongfei Liu,

    1. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore 117602, Singapore
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  • Wei Liu,

    1. School of Electrical and Electronic Engineering, Luminous! Center of Excellence for Semiconductor Lighting and Display, Nanyang Technology University, Singapore 639798, Singapore
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  • Soojin Chua,

    1. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore 117602, Singapore
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  • Dongzhi Chi,

    1. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore 117602, Singapore
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  • Zhong Lin Wang

    Corresponding author
    1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
    2. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China
    • School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
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Abstract

The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.

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