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Keywords:

  • zinc oxide;
  • nanowires;
  • field-effect transistors, ferroelectric (FeFETs);
  • one-dimensional (1D) electronics;
  • memory inverter circuit
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A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.