Get access

Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer

Authors

  • Young Tack Lee,

    1. Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
    Search for more papers by this author
  • Pyo Jin Jeon,

    1. Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
    Search for more papers by this author
  • Kwang H. Lee,

    1. Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
    Search for more papers by this author
  • Ryong Ha,

    1. Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
    Search for more papers by this author
  • Heon-Jin Choi,

    1. Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
    Search for more papers by this author
  • Seongil Im

    Corresponding author
    1. Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea
    • Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea.
    Search for more papers by this author

Abstract

original image

A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.

Get access to the full text of this article

Ancillary