Flexible Three-Dimensional Organic Field-Effect Transistors Fabricated by an Imprinting Technique

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Abstract

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Flexible three-dimensional organic field-effect transistors with high performance are developed utilizing simple imprint technology. Owing to the multiplied vertical channels with short channel length of 0.9 μm, the devices show high output current density and fast dynamic response within 140 ns, which corresponds to as high as 7 MHz. The present fabrication process using imprint technique has advantages in low-cost, a high throughput, and easy processes.

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