Communication

High Density and Large Area Arrays of Silicon Oxide Pillars with Tunable Domain Size for Mask Etch Applications

  1. Xiaodan Gu1,
  2. Paul Dorsey2,
  3. Thomas P. Russell1,*

Article first published online: 10 AUG 2012

DOI: 10.1002/adma.201201278

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 40, pages 5505–5511, October 23, 2012

Additional Information

How to Cite

Gu, X., Dorsey, P. and Russell, T. P. (2012), High Density and Large Area Arrays of Silicon Oxide Pillars with Tunable Domain Size for Mask Etch Applications. Adv. Mater., 24: 5505–5511. doi: 10.1002/adma.201201278

Author Information

  1. 1

    Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA

  2. 2

    Western Digital Inc., Media Site, San Jose, California 95131, USA

*Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, USA.

Publication History

  1. Issue published online: 12 OCT 2012
  2. Article first published online: 10 AUG 2012
  3. Manuscript Received: 28 MAR 2012

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Keywords:

  • block copolymer self-assembly;
  • reactive ion etching;
  • silicon oxide;
  • tunable feature sizes;
  • pattern transfer
Thumbnail image of graphical abstract

Silicon oxide pillars with tunable feature sizes and pitches are fabricated based on a block copolymer self-assembly template. By using reactive ion etching (RIE), the feature size of the silicon oxide pillars can be tuned without affecting the pitch. Using BCP with a different molecular weight can change the pitch size of the silicon oxide pillars. An area density of up to 2 teradots/inch2 is achieved.

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