Advanced Materials

On the Origin of Contact Resistances of Organic Thin Film Transistors

Authors

  • Marko Marinkovic,

    1. Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Campus Ring 1, D-28759 Bremen, Germany
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  • Dagmawi Belaineh,

    1. Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Campus Ring 1, D-28759 Bremen, Germany
    Current affiliation:
    1. Organic Nano Device Laboratory, Department of Physics, National University Singapore, Singapore
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  • Veit Wagner,

    1. Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Campus Ring 1, D-28759 Bremen, Germany
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  • Dietmar Knipp

    Corresponding author
    1. Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Campus Ring 1, D-28759 Bremen, Germany
    • Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Campus Ring 1, D-28759 Bremen, Germany.
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Abstract

A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.

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