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Keywords:

  • GaS;
  • GaSe;
  • layered materials;
  • transistors;
  • semiconductors;
  • photodetectors
Thumbnail image of graphical abstract

Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.