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GaS and GaSe Ultrathin Layer Transistors

Authors

  • Dattatray J. Late,

    1. Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA
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  • Bin Liu,

    1. Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA
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  • Jiajun Luo,

    1. Department of Electrical Engineering and Computer Science, Northwestern University, Evanston IL 60208, USA
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  • Aiming Yan,

    1. Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA
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  • H. S. S. Ramakrishna Matte,

    1. International Centre for Materials Science and CSIR Centre of Excellence in Chemistry, Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560064, India
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  • Matthew Grayson,

    1. Department of Electrical Engineering and Computer Science, Northwestern University, Evanston IL 60208, USA
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  • C. N. R. Rao,

    1. International Centre for Materials Science and CSIR Centre of Excellence in Chemistry, Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560064, India
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  • Vinayak P. Dravid

    Corresponding author
    1. Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA
    • Department of Materials Science and Engineering, International Institute of Nanotechnology, Northwestern University, Evanston, IL 60208, USA.
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Abstract

original image

Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.

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