Communication

Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits

  1. Kang-Jun Baeg2,†,*,
  2. Dongyoon Khim3,
  3. Soon-Won Jung2,
  4. Minji Kang3,
  5. In-Kyu You2,
  6. Dong-Yu Kim3,
  7. Antonio Facchetti4,*,
  8. Yong-Young Noh1,*

Article first published online: 9 JUL 2012

DOI: 10.1002/adma.201201464

Issue

Advanced Materials

Advanced Materials

Volume 24, Issue 40, pages 5433–5439, October 23, 2012

Additional Information

How to Cite

Baeg, K.-J., Khim, D., Jung, S.-W., Kang, M., You, I.-K., Kim, D.-Y., Facchetti, A. and Noh, Y.-Y. (2012), Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits. Adv. Mater., 24: 5433–5439. doi: 10.1002/adma.201201464

Author Information

  1. 1

    Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea

  2. 2

    Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea

  3. 3

    Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea

  4. 4

    Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077, USA

  1. †

    Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA; E-mail: kang-jun.baeg@northwestern.edu

*Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea

Publication History

  1. Issue published online: 12 OCT 2012
  2. Article first published online: 9 JUL 2012
  3. Manuscript Revised: 24 MAY 2012
  4. Manuscript Received: 11 APR 2012

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Keywords:

  • ambipolarity;
  • organic field-effect transistors;
  • P(VDF-TrFE);
  • dielectric;
  • conjugated polymers;
  • charge transport;
  • organic complementary circuit
Thumbnail image of graphical abstract

A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V−1 s−1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

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