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Keywords:

  • ambipolarity;
  • organic field-effect transistors;
  • P(VDF-TrFE);
  • dielectric;
  • conjugated polymers;
  • charge transport;
  • organic complementary circuit
Thumbnail image of graphical abstract

A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V−1 s−1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.