Advanced Materials

Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits

Authors

  • Kang-Jun Baeg,

    Corresponding author
    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
    Current affiliation:
    1. Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA; E-mail: kang-jun.baeg@northwestern.edu
    • Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Dongyoon Khim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Soon-Won Jung,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Minji Kang,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • In-Kyu You,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 305-700, Republic of Korea
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  • Dong-Yu Kim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Antonio Facchetti,

    Corresponding author
    1. Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077, USA
    • Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077, USA
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  • Yong-Young Noh

    Corresponding author
    1. Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea
    • Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea.
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Abstract

A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V−1 s−1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.

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