Advanced Materials

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

Authors

  • Xiaojian Zhu,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Wenjing Su,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Yiwei Liu,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Benlin Hu,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Liang Pan,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Wei Lu,

    Corresponding author
    1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
    • Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
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  • Jiandi Zhang,

    1. Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, USA
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  • Run-Wei Li

    Corresponding author
    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
    • Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China.
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Abstract

Conductance quantization phenomena are observed in oxide-based resistive switching memories. These phenomena can be understood by the formation and disruption of atomic-scale conductive filaments in the insulating oxide matrix. The quantum conductance effect can be artificially modulated by controlling the electrical parameters in Set and Reset processes, and can be used for multi-level data storage and help understand and design one-dimensional structures at atomic scales in various materials systems.

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