Conductance quantization phenomena are observed in oxide-based resistive switching memories. These phenomena can be understood by the formation and disruption of atomic-scale conductive filaments in the insulating oxide matrix. The quantum conductance effect can be artificially modulated by controlling the electrical parameters in Set and Reset processes, and can be used for multi-level data storage and help understand and design one-dimensional structures at atomic scales in various materials systems.
If you can't find a tool you're looking for, please click the link at the top of the page to go "Back to old version". We'll be adding more features regularly and your feedback is important to us, so please let us know if you have comments or ideas for improvement.