Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
Version of Record online: 18 JUN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 24, Issue 29, pages 3941–3946, August 2, 2012
How to Cite
Zhu, X., Su, W., Liu, Y., Hu, B., Pan, L., Lu, W., Zhang, J. and Li, R.-W. (2012), Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory. Adv. Mater., 24: 3941–3946. doi: 10.1002/adma.201201506
- Issue online: 24 JUL 2012
- Version of Record online: 18 JUN 2012
- Manuscript Received: 15 APR 2012
Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors.
Please note: Wiley Blackwell is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.