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Toward Robust Nanogenerators Using Aluminum Substrate

Authors

  • Sangmin Lee,

    1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
    Current affiliation:
    1. These authors contributed equally to this work
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  • Jung-Il Hong,

    1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
    2. Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea
    Current affiliation:
    1. These authors contributed equally to this work
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  • Chen Xu,

    1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
    Current affiliation:
    1. These authors contributed equally to this work
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  • Minbaek Lee,

    1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
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  • Dongseob Kim,

    1. Department of Mechanical Engineering, Pohang University of Science and Technology, San 31, Hyoja, Namgu, Pohang, Gyungbuk 790-784, Korea
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  • Long Lin,

    1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
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  • Woonbong Hwang,

    1. Department of Mechanical Engineering, Pohang University of Science and Technology, San 31, Hyoja, Namgu, Pohang, Gyungbuk 790-784, Korea
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  • Zhong Lin Wang

    Corresponding author
    1. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
    2. Beijing Institue of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China
    • School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
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Abstract

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Nanogenerators (NG) have been developed to harvest mechanical energy from environmental sources such as vibration, human motion, or movement of automobiles. We demonstrate a robust and large-area NG based on a cost-effective Al substrate with the capability to be easily integrated in series and parallel for high-output performance. The output voltage and current density of the three-dimensionally integrated NG device reaches up to 3 V and 195 nA under human walking conditions.

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