Communication: Advanced Optical Materials
Low-Threshold Nanolasers Based on Slab-Nanocrystals of H-Aggregated Organic Semiconductors
Article first published online: 16 JUL 2012
DOI: 10.1002/adma.201201579
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Xu, Z., Liao, Q., Shi, Q., Zhang, H., Yao, J. and Fu, H. (2012), Low-Threshold Nanolasers Based on Slab-Nanocrystals of H-Aggregated Organic Semiconductors. Adv. Mater., 24: OP216–OP220. doi: 10.1002/adma.201201579
Publication History
- Issue published online: 4 SEP 2012
- Article first published online: 16 JUL 2012
- Manuscript Received: 20 APR 2012
Keywords:
- lasers;
- nanowires;
- H-aggregates;
- organic semiconductors;
- photonics
Low-threshold nanolasers based on slab nanocrystals (SNCs) of highly emissive H-aggregated organic semiconductors are reported. A lasing threshold as low as 100 nJ cm−2 is achieved in a high-quality (cavity quality factor ≈ 1000) Fabry–Pérot cavity constituted by the two lateral-faces of SNCs at the wavelength scale. Moreover, the laser light generated in the ultrasmall radial cavity of SNCs can propagate along its length up to hundreds of micrometers, making them attractive building blocks for miniaturized photonic circuits.

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